The newest model employs a highly efficient two-fluid nozzle vaporizer structure with an enlarged vaporization chamber and an improved vaporization outlet to reduce unevaporated emissions.
The convection time and heat exchange area have been improved by enlarging the vaporization chamber volume compared to the VU-450. High flow rate vaporization is realized.
Longer distance to the Gas Outlet suppresses the discharge of mist (unevaporated).
Suitable for low vapor pressure and large flow rate vaporization of low-k, high-k, and various metals.
Since it is a valve-integrated vaporizer, it can be used in combination with the LM-3000L to control the liquid flow rate immediately adjacent to the vaporizer. Highly responsive vaporization flow control is possible.
- Highly efficient vaporization
- Easy maintenance
- Valve proximity
- Increased outlet heating distance
Examples of Use
Vaporization supply CVD and ALD of semiconductor materials
By enlarging the vaporization chamber, mist atomized from the center two-fluid nozzle is more diffused than VU-450. With the heater W up, large flow rate vaporization of 30 g/min for TEOS and 5 g/min for H2O is stably possible.
|Max. temperature||Carrier gas flow||Max TEOS vaporization|
Max H2O vaporization